vishay gsot05c - ht3 document number 85825 rev. 1, 02-jun-03 vishay semiconductors www.vishay.com 1 pin 1 top view 18151 12 3 esd protection diode features ? transient protection for data lines as per iec 61000-4-2 (esd) 15 kv (air) 8 kv (contact) iec 61000-4-5 (lightning) see i ppm below space saving liliput package mechanical data case: llp75-3b plastic package molding compound flammability rating: ul 94 v-0 terminals: high temperature soldering guaranteed: 260 c/10 sec. at terminals weight: 5 mg parts table absolute maximum ratings ratings at 25 c, ambient temperature unless otherwise specified 1) non-repetitive current pulse and derated above t a = 25 c thermal characteristics ratings at 25 c, ambient temperature unless otherwise specified electrical characteristics part ordering code marking remarks GSOT05C-HT3 GSOT05C-HT3-gs08 05 tape and reel parameter te s t c o n d i t i o n symbol value unit peak power dissipation 1) 8/20 s pulse p pk 300 w forward surge current 8.3 ms single half sine-wave i fsm 7 a parameter tes t co nd iti on symbol value unit operation and storage temperature range t stg , t j - 55 to + 150 c part number device marking code rated stand-off voltage minimum breakdown voltage maximum clamping voltage maximum pulse peak current maximum leakage current maximum capacitance @ 1 ma @ i p = 1 a @ i p = 5 a t p = 8/20 s @ v wm @ 0 v, 1 mhz v wm v br v c i ppm i d c v v v a a pf gsot05c- ht3 05 5.0 6.0 9.8 12.5 17 100 400
www.vishay.com 2 document number 85825 rev. 1, 02-jun-03 vishay gsot05c - ht3 vishay semiconductors typical characteristics (t amb = 25 c unless otherwise specified) figure 1. non -repetitive peak pulse power vs. pulse time figure 2. pulse waveform figure 3. power derating p ppm - peak pulse power (w) 100 1000 10000 0.1 1.0 10 td - pulse duration ( s) 100 1000 10000 10 300w, 8/20 s waveshape 17476 0 50 100 90 80 70 60 40 30 20 10 110 i ppm - peak pulse current, % i rsm pulse width (td) is defined as the point where the peak current decays to 50% of i ppm 0 10 5 15 20 30 25 t - time ( s) t d = i pp 2 17477 t l - lead temperature c 0 20 40 60 80 100 % of rated power 0 50 25 75 100 125 150 average power peak pulse power 8/20 s 17478
vishay gsot05c - ht3 document number 85825 rev. 1, 02-jun-03 vishay semiconductors www.vishay.com 3 package dimensions in mm 18057 iso method e
www.vishay.com 4 document number 85825 rev. 1, 02-jun-03 vishay gsot05c - ht3 vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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